Citaat | Rechtbank Den Haag 30 november 2016

Onder 2.3. Rechtbank Den Haag 30 november 2016

Een alinea uit Rechtbank Den Haag 30 november 2016, ECLI:NL:RBDHA:2016:14326.

[0039] The gate of drive switch 172 forms a storage node capacitance 126 that functions as a memory element to store data pursuant to the sequential activation of a pre-charge transistor 128 and a select transistor 130. The drainsource path and gate of pre-charge transistor 128 are electrically coupled to a pre-charge line 132 that receives a precharge signal. The gate of drive switch 172 is electrically coupled to the drain-source path of pre-charge transistor 128 and the drain-source path of select transistor 130. The gate of select transistor 130 is electrically coupled to a select line 134 that receives a select signal. The storage node capacitance 126 is shown in dashed lines, as it is part of drive switch 172. Alternatively, a capacitor separate from drive switch 172 can be used as a memory element.

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